Dielectric Behavior and A.C Conductivity of Cd2Si1-xGexO4 Compound

Abstract

The effect of additives  (Ge)  on  a.c  conductivity and dielectric properties of Cd2Si1-xGexO4 compound at ( x = 0, 0.25, 0.5) at temperature range (300 – 473) K and frequency range (100 Hz-10MHz) has been studied. Experimental results indicate that the a.c conductivity and dielectric parameters are temperature, frequency and impurity dependent. The a.c conductivity in the aforesaid frequency range is found to obey the ωs law. A strong dependence of a.c conductivity and exponent s in the entire temperature and frequency range can be interpreted in terms of the correlated barrier hopping (CBH) model due to the effect of Ge element. The variation of above mentioned properties with Ge element are also investigated and results are explained in terms of lone pair configuration of the studied compositions.