Hai Helen Li, Haiwen Xi, Yiran Chen, J. Stricklin, Xiaobin Wang, Tong Zhang
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引用次数: 5
Abstract
Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying the memory element dimension and resistance-area product. We also provide systematic analysis and comparison between the thermal-assisted STT-RAM and standard STT-RAM. Discussions on the writeability and scalability of thermal-assisted STT-RAM are also conducted.
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