Comparative Study of Selector Device Design for Sneak Current in 3D Crosspoint ReRAM

Abstract

Resistive Random Access Memory (ReRAM) is an emerging high density storage device in today’s world. The crosspoint connection of the ReRAM cell will have the advantage of eliminating the expensive transistors in the design. But the challenge in the design is the selection of the selector device. A review of selector device design on 3D crosspoint ReRAM is presented in this article. The number of ReRAM devices are connected with the wordline and bitline in the crossbar array to have high density storage. This article illustrates the methods for the stacking of ReRAM memory cells and selector devices. The flow of sneak current and the formation of sneak path are discussed in the article. The sneak path will consume the storage space in the memory device unwantedly, so it has to be reduced for the efficient use of the storage cell. The review focuses on the reason for the design of selector device and the methods that are available to compensate for the sneak current problem in the crossbar ReRAM memory and to improve the endurance and resistance ratio of the device are also discussed.