Characterization of Soft Error Rate Against Memory Elements Spacing and Clock Skew in a Logic with Triple Modular Redundancy in a 65nm Process

S. Miryala, T. Hemperek, M. Menouni
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引用次数: 3

Abstract

Single Event Effects introduce soft errors in ASICs. Design methodologies like Triple Modular Redundancy (TMR) with clock skew insertion, a system level redundancy technique is a common practice by designers to mitigate soft errors. However, the optimal spacing between memory elements in a TMR in 65nm process hasn't been addressed so far. RD53SEU is a mini ASIC development under the framework of the CERN RD53 collaboration to characterize the soft error rates against the separation spacing and clock skew between memory elements in a TMR. This article describes the architecture and design aspects of the various test structures on the RD53SEU test chip.
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65nm制程中三模冗余逻辑对记忆元件间距和时钟偏差的软错误率表征
单事件效应在asic中引入了软错误。设计方法,如时钟倾斜插入的三模冗余(TMR),一种系统级冗余技术,是设计人员减少软错误的常见做法。然而,在65nm制程的TMR中,存储器元件之间的最佳间距尚未得到解决。RD53SEU是CERN RD53合作框架下的小型ASIC开发,用于表征TMR中存储元件之间的分离间隔和时钟偏差的软错误率。本文介绍了RD53SEU测试芯片上各种测试结构的体系结构和设计。
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