{"title":"Instantaneous S parameters measurements of MESFETs under burst bias conditions","authors":"M. Begin, F. Ghannouchi, L. Selmi, B. Riccò","doi":"10.1109/IMTC.1994.351974","DOIUrl":null,"url":null,"abstract":"An innovative six-port network analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.<<ETX>>","PeriodicalId":231484,"journal":{"name":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. 10th Anniversary. IMTC/94. Advanced Technologies in I & M. 1994 IEEE Instrumentation and Measurement Technolgy Conference (Cat. No.94CH3424-9)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMTC.1994.351974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An innovative six-port network analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.<>
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