An on-chip active frequency multiplier-by-seven (X-band to W-band) for millimeter-wave signal generation

Abstract

This paper discusses an active on-chip multiplier for mm-wave generation, implemented in CMOS 65nm TSMC technology. The multiplying is done within single stage, which is connected via wire bonds to 4 stage PA, reducing the DC power consumption to 360 mW, 80 mW for the multiplying stage and 280 mW for the PA. Total core silicon area of 0.92 mm2, 0.31 mm2 the multiplier area and 0.61 mm2 the PA area. Achieving Psat of 6 dBm at 82 GHz.