New generation of isolated electron-injection imagers

Abstract

This paper describes a novel electron-injection based short-wave infrared imager. The first generation of electron-injection imager achieved two orders of magnitude better signal to noise ratio compared with a commercial high-end SWIR camera. In the second generation, detectors are isolated and achieve extremely low dark current, record low noise levels and fast rise times while maintaining the very large internal amplification. Furthermore, electron-injection imager shows superior noise performance compared with imagers made with the state-of-the-art InGaAs PIN and MCT eAPDs.