{"title":"BaTiO 3 半导体陶瓷从PTC特性向边界层电容效应过渡问题探讨——晶界势垒模型","authors":"郑振华, 缪容之, 陈羽","doi":"10.1360/ZA1994-24-2-218","DOIUrl":null,"url":null,"abstract":"对作者提出的晶界势垒模型作定量分析．由理论模型得到的结果定量解释了BaTiO 3 半导体陶瓷从ＰＴＣ特性向边界层电容效应过渡的有关现象；由此对BaTiO 3 半导体陶瓷边界层电容器和ＰＴＣ电阻器的性能作出了设计，设计值明显优于目前的实验值；对提高器件性能的方法作了探讨，提出了相应的措施．本文的结果为BaTiO 3 半导体陶瓷器件的设计、生产和性能提高提供了理论基础","PeriodicalId":256661,"journal":{"name":"Science in China Series A-Mathematics, Physics, Astronomy & Technological Science","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science in China Series A-Mathematics, Physics, Astronomy & Technological Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1360/ZA1994-24-2-218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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BaTiO 3 半导体陶瓷从PTC特性向边界层电容效应过渡问题探讨——晶界势垒模型
对作者提出的晶界势垒模型作定量分析．由理论模型得到的结果定量解释了BaTiO 3 半导体陶瓷从ＰＴＣ特性向边界层电容效应过渡的有关现象；由此对BaTiO 3 半导体陶瓷边界层电容器和ＰＴＣ电阻器的性能作出了设计，设计值明显优于目前的实验值；对提高器件性能的方法作了探讨，提出了相应的措施．本文的结果为BaTiO 3 半导体陶瓷器件的设计、生产和性能提高提供了理论基础
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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