A. Baig, D. Gamzina, Micheal Johnson, C. Domier, A. Spear, L. Barnett, N. Luhmann, Y. Shin
{"title":"Experimental characterization of LIGA fabricated 0.22 THz TWT circuits","authors":"A. Baig, D. Gamzina, Micheal Johnson, C. Domier, A. Spear, L. Barnett, N. Luhmann, Y. Shin","doi":"10.1109/IVEC.2011.5746982","DOIUrl":null,"url":null,"abstract":"In this paper we report precision MEMS Fabrication using novel LIGA technique for 0.22 THz micro-metallic staggered double-vane TWT circuits. For this high aspect ratio structure negative tone photo-resist KMPR was used. The entire fabrication process starting from spin coating, UV-lithography, electroforming and mold removal processing was fully characterized. Finally, the high tolerance TWT structure with smoothness (50–80 nm) was aligned in a specially engineered fixture for RF measurements in the BWO range 165–270GHz. The experiment showed excellent transmission 5–8 dB in frequency range 210–265 GHz. This result showed a distinct potential of applying this precision fabrication technique for the mass production of THz sources.","PeriodicalId":106174,"journal":{"name":"2011 IEEE International Vacuum Electronics Conference (IVEC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Vacuum Electronics Conference (IVEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVEC.2011.5746982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
In this paper we report precision MEMS Fabrication using novel LIGA technique for 0.22 THz micro-metallic staggered double-vane TWT circuits. For this high aspect ratio structure negative tone photo-resist KMPR was used. The entire fabrication process starting from spin coating, UV-lithography, electroforming and mold removal processing was fully characterized. Finally, the high tolerance TWT structure with smoothness (50–80 nm) was aligned in a specially engineered fixture for RF measurements in the BWO range 165–270GHz. The experiment showed excellent transmission 5–8 dB in frequency range 210–265 GHz. This result showed a distinct potential of applying this precision fabrication technique for the mass production of THz sources.