A. Bag, P. Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, S. M. Dinara, S. Kabi, A. Chakraborty, D. Biswas
{"title":"Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)","authors":"A. Bag, P. Mukhopadhyay, Saptarsi Ghosh, Rahul Kumar, S. M. Dinara, S. Kabi, A. Chakraborty, D. Biswas","doi":"10.1109/TECHSYM.2014.6808083","DOIUrl":null,"url":null,"abstract":"Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2014 IEEE Students' Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TECHSYM.2014.6808083","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
