{"title":"mm-wave phased arrays in silicon with integrated antennas","authors":"A. Babakhani, D. Rutledge, A. Hajimiri","doi":"10.1109/APS.2007.4396510","DOIUrl":null,"url":null,"abstract":"This work demonstrates W-band integrated dipole antennas and a four channel phased transceiver implemented in IBM 130 nm silicon germanium BiCMOS process. The chip includes the complete receiver, transmitter, signal generation blocks, phase shifters, and on-chip dipole antennas. A hemispherical silicon lens with diameter of about one inch is also used to remove the substrate modes. Measurement results show a maximum antenna gain of about +8 dB.","PeriodicalId":117975,"journal":{"name":"2007 IEEE Antennas and Propagation Society International Symposium","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Antennas and Propagation Society International Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APS.2007.4396510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
This work demonstrates W-band integrated dipole antennas and a four channel phased transceiver implemented in IBM 130 nm silicon germanium BiCMOS process. The chip includes the complete receiver, transmitter, signal generation blocks, phase shifters, and on-chip dipole antennas. A hemispherical silicon lens with diameter of about one inch is also used to remove the substrate modes. Measurement results show a maximum antenna gain of about +8 dB.
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