Performance Projection of GaN HEMT: Experimental Verification Using Angelov Model

Abstract

This work utilizes the Angelov model via experimental validation to estimate the performance of GaN HEMT. We changed the two variables (a and λ) and then used Angelov model to explain how to match the experimental results of the I- V characteristics curve and highlight their impacts on the saturation and the linear regions. We also look at how the output conductance and transconductance behave, and compare the data from the simulation and the data from the experiment. The measurements and simulations closely matched the DC findings of the GaN HEMT.