C. Brisset, O. Noblanc, C. Picard, F. Joffre, C. Brylinski
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引用次数: 5
Abstract
This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.
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