M. Andreev, I. Lamkin, S. Tarasov, I. I. Mikhailov, A. Solomonov
{"title":"Ohmic and rectifying contacts for ultraviolet photodiode based on AlGaN solid solutions","authors":"M. Andreev, I. Lamkin, S. Tarasov, I. I. Mikhailov, A. Solomonov","doi":"10.1109/EICONRUSNW.2015.7102221","DOIUrl":null,"url":null,"abstract":"A technology of Ti/Al contacts using thermal vacuum evaporation and further annealing in vacuum wasproposed. Contacts for Si-doped Al<sub>x</sub>Ga<sub>1-x</sub>N epitaxial layers (x = 0.08 - 0.7, n = 1.7 · 10<sup>19</sup> cm<sup>-3</sup>) were fabricated and investigated. The Si-doped epitaxial layers were grown by plasma-assisted MBE and HVPE (x = 0.1, n = 10<sup>16</sup> - 10<sup>19</sup>) on c-sapphire substrates. The contact resistance of 8 · 10<sup>-5</sup> Ω· cm<sup>2</sup> was achieved for the Al<sub>0.5</sub>Ga<sub>0.5</sub>N sample. Auger electron spectroscopy was used to study redistribution of metal atoms after annealing.","PeriodicalId":268759,"journal":{"name":"2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EICONRUSNW.2015.7102221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A technology of Ti/Al contacts using thermal vacuum evaporation and further annealing in vacuum wasproposed. Contacts for Si-doped AlxGa1-xN epitaxial layers (x = 0.08 - 0.7, n = 1.7 · 1019 cm-3) were fabricated and investigated. The Si-doped epitaxial layers were grown by plasma-assisted MBE and HVPE (x = 0.1, n = 1016 - 1019) on c-sapphire substrates. The contact resistance of 8 · 10-5 Ω· cm2 was achieved for the Al0.5Ga0.5N sample. Auger electron spectroscopy was used to study redistribution of metal atoms after annealing.
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