Preparation and investigation of electrodeposited p-Si/Cd0.3Zn0.7S0.4Se0.6 heterojunction

Abstract

The dependences of electric and photoelectric parameters of the heterojunctions p-Si/Cd0.3Zn0.7S0.4Se0.6 on the thermal annealing regime are investigated. It is shown, that after thermal annealing at 400°C for τ = 6 min, a recombination rate on the interface does not almost change in a wide range of temperature. As the annealing temperature was increased from 0 to 170°C (τ= 2min), the intensity of peak in the λml = 0.593 μm wavelength region sharply increases. Upon heart treatment in air at t = 400°C for 5 ÷ 6 min, heterojunctions exhibit high photosensitivity over a wide spectral range (0.560 - 1 .38 μm). The evaluation of solar cell parameters was carried out using the dark and light current-voltage characteristics. The open circuit photovoltage and short circuit photocurrent density of HJ were Voc = 0.564 V, Jsc= 1 8.7 mA/cm2, respectively.