The influence of the cathode melted layer on vacuum insulation

2016 27th International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV) Pub Date : 2016-09-01 DOI:10.1109/DEIV.2016.7748664

Shimin Li, Yingsan Geng, Zhiyuan Liu, Jianhua Wang

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引用次数: 2

Abstract

The objective of this paper is to determine the influence of the depth of cathode melted layer on vacuum gap's insulation. A pair of rod-plane electrode was used. A DC arcing circuit produced different depth melted layer on the rod anode through different arcing time, which were 10ms, 46ms and 73ms respectively. Then the vacuum gap was adjusted at 1mm to measure the breakdown voltage. Positive polarity standard 1.2/50μs lighting impulse voltage was applied by a basic up-down method and the rod was the cathode. Experimental results revealed that the breakdown probability distribution followed a Weibull distribution when the breakdown voltage saturated. The 50% breakdown voltage U50 of different arcing time 0ms, 10ms, 46ms, 73ms corresponded to 55.6kV, 73.3kV, 75.5kV, 77.9kV, respectively. The U50 with the melted layers increased 37% at least. However, the U50 with various depth of melted layers were similar. Therefore, the melted layer does improve the breakdown voltage but the depth of melted layer has no influence on the breakdown voltage.

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阴极熔化层对真空绝缘的影响

本文的目的是确定阴极熔化层深度对真空间隙绝缘的影响。采用一对棒面电极。直流电弧电路通过不同的电弧时间在棒阳极上产生不同深度的熔化层，分别为10ms、46ms和73ms。然后将真空间隙调整为1mm，测量击穿电压。采用基本上下法施加正极性标准1.2/50μs照明脉冲电压，棒为阴极。实验结果表明，当击穿电压达到饱和时，击穿概率服从威布尔分布。不同电弧时间0ms、10ms、46ms、73ms的50%击穿电压U50分别对应55.6kV、73.3kV、75.5kV、77.9kV。有熔化层的U50至少增加了37%。然而，不同熔层深度的U50相似。因此，熔层确实提高了击穿电压，但熔层深度对击穿电压没有影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 27th International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV)

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