{"title":"A versatile electrical model for IGBT including thermal effects","authors":"B. Fatemizadeh, D. Silber","doi":"10.1109/PESC.1993.471939","DOIUrl":null,"url":null,"abstract":"Based on general semiconductor device equations and results of two-dimensional modeling (PISCES), an analytical insulated gate bipolar transistor (IGBT) model has been developed. Temperature effects in the range 250-450 K are considered. The electrical-thermal model has been simplified to a level which enables implementation in general purpose circuit analysis computer programs, such as PSPICE and SABER, for use in the analysis and design of switching circuits.<<ETX>>","PeriodicalId":358822,"journal":{"name":"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Power Electronics Specialist Conference - PESC '93","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1993.471939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
Based on general semiconductor device equations and results of two-dimensional modeling (PISCES), an analytical insulated gate bipolar transistor (IGBT) model has been developed. Temperature effects in the range 250-450 K are considered. The electrical-thermal model has been simplified to a level which enables implementation in general purpose circuit analysis computer programs, such as PSPICE and SABER, for use in the analysis and design of switching circuits.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
