Novel Biosensor Based on MOSFET-BJT Hybrid Mode of Gated Lateral Bipolar Junction Transistor for C-reactive Protein Detection

H. Yuan, Bo Wang, S. Yeom, Byoung-Ho Kang, Kyu-Jin Kim, D. Kwon, Jung-Hee Lee, Shin-Won Kang
{"title":"Novel Biosensor Based on MOSFET-BJT Hybrid Mode of Gated Lateral Bipolar Junction Transistor for C-reactive Protein Detection","authors":"H. Yuan, Bo Wang, S. Yeom, Byoung-Ho Kang, Kyu-Jin Kim, D. Kwon, Jung-Hee Lee, Shin-Won Kang","doi":"10.1109/ISMS.2012.79","DOIUrl":null,"url":null,"abstract":"In this paper, a biosensor based on a gated lateral bipolar junction transistor (BJT) was proposed. The gated lateral BJT can function as both a metal-oxide-semiconductor field-effect transistor (MOSFET) and a BJT. By using selfassembled monolayer (SAM) method, the CRP antibodies were immobilized on the floating gate of the device as the sensing membrane. Through the experiment, the characteristics of the gated lateral BJT for biomaterials detection were analyzed in this study. According to the results, under the MOSFET-BJT hybrid mode of the device, when the base current was -10 μA, the sensitivity was approximately 0.80 μA/decade, and the sensing limit was approximately 1 pmol/L. Meanwhile, the gated lateral BJT can be successfully applicable as sensitive biosensor.","PeriodicalId":200002,"journal":{"name":"2012 Third International Conference on Intelligent Systems Modelling and Simulation","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Third International Conference on Intelligent Systems Modelling and Simulation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMS.2012.79","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this paper, a biosensor based on a gated lateral bipolar junction transistor (BJT) was proposed. The gated lateral BJT can function as both a metal-oxide-semiconductor field-effect transistor (MOSFET) and a BJT. By using selfassembled monolayer (SAM) method, the CRP antibodies were immobilized on the floating gate of the device as the sensing membrane. Through the experiment, the characteristics of the gated lateral BJT for biomaterials detection were analyzed in this study. According to the results, under the MOSFET-BJT hybrid mode of the device, when the base current was -10 μA, the sensitivity was approximately 0.80 μA/decade, and the sensing limit was approximately 1 pmol/L. Meanwhile, the gated lateral BJT can be successfully applicable as sensitive biosensor.
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基于MOSFET-BJT混合模式门控侧双极结晶体管的新型c反应蛋白检测生物传感器
提出了一种基于门控侧双极结晶体管的生物传感器。门控横向BJT既可以作为金属氧化物半导体场效应晶体管(MOSFET),也可以作为BJT。采用自组装单层(SAM)法将CRP抗体固定在器件的浮栅上作为传感膜。通过实验,分析了门控侧BJT检测生物材料的特点。结果表明,该器件在MOSFET-BJT混合模式下,当基极电流为-10 μA时,灵敏度约为0.80 μA/decade,传感极限约为1 pmol/L。同时,门控式横向BJT可以成功地应用于灵敏的生物传感器。
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