Effect of temperature on electrical characteristics of NbOx volatile memristor

Abstract

Synaptic devices are progressing towards large-scale integration, but artificial neuron device research is still in its infancy. NbOx is an artificial neuron core material, but the Vth, Vhold of the threshold shift of NbOx will shift within a certain range, which will be unfavorable for making oscillating neurons.In this paper, We explore the Vth and Vhold shift and electrical properties of NbOx volatile memristor in different temperatures. The results indicate that the window of I-V behaves more stable at low temperatures, and higher temperatures would make the window stochastic increasing and more prone to failure. Furthermore, this suggests that the reduction of the high resistance state of the volatile NbOx memristor is due to the reduction of the Schottky barrier.