{"title":"The p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration","authors":"W. Chen, G. Amaratunga","doi":"10.1109/BIPOL.1995.493898","DOIUrl":null,"url":null,"abstract":"A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2D numerical simulations and experimental fabrication.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"238 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493898","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2D numerical simulations and experimental fabrication.
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