{"title":"A 4.5 W, 26 dB Gain FET Power Amplifier at Ku-Band","authors":"V. Sokolov, R. Bennett","doi":"10.1109/MWSYM.1981.1129844","DOIUrl":null,"url":null,"abstract":"Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"480 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.
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