Innovative and Complete Dummy Filling Strategy for RF Inductors Integrated in an Advanced Copper BEOL

Abstract

A complete strategy to manage dummy fills inside and underneath a large spectrum of integrated RF inductors realized in a 0.13 mum CMOS technology using a Damascene Copper Back End of Line (BEOL) is presented here. The main motivation of this paper is first to evaluate through a Design Of Experiment (DOE) modeling, the impact on RF inductor performances of dummy fills inserted inside or underneath the coils, and then determine the right metal fill density to insert to be compliant with Digital metal density rules without degrading their electrical performances.