Numerical Study of a New Junctionless Tunneling Field-Effect Transistor Based on Graphene Nanoribbon

Abstract

In this paper, a new nanoscale junctionless graphene nanoribbon tunnel field-effect transistor (JL GNRTFET) is proposed and assessed through a quantum simulation study. The computational approach is based on the non-equilibrium Green's function formalism. The tunneling FET mechanism of the proposed device is only ensured by the electrostatic gating while keeping the junctionless aspect. Moreover, the simulations have shown that the proposed JL GNRTFET can exhibit an improvement in terms of subthreshold swing, off-current, and current ratio in comparison to the conventional GNRTFET. The obtained results make the proposed junctionless GNRTFET a promising candidate for the futuristic nanoelectronics.