{"title":"CAD model to compute input impedance and bandwidth of tunable right angle isosceles triangular patch antenna","authors":"M. Dam, S. Mazumder, M. Biswas","doi":"10.1109/C3IT.2015.7060154","DOIUrl":null,"url":null,"abstract":"A fast and accurate CAD model based on cavity model analysis has been proposed to predict the input impedance and bandwidth of a tunable right angle isosceles triangular patch antenna (RAITPA). The effect of suspended substrate on the input impedance and bandwidth has been thoroughly investigated. The accuracy of the present model is computed against the HFSS simulated results. The present model shows very good agreement with the simulated results. For designing the MIC on semiconductor materials with εr≥ 10, this model will be widely applicable.","PeriodicalId":402311,"journal":{"name":"Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)","volume":"477 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/C3IT.2015.7060154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A fast and accurate CAD model based on cavity model analysis has been proposed to predict the input impedance and bandwidth of a tunable right angle isosceles triangular patch antenna (RAITPA). The effect of suspended substrate on the input impedance and bandwidth has been thoroughly investigated. The accuracy of the present model is computed against the HFSS simulated results. The present model shows very good agreement with the simulated results. For designing the MIC on semiconductor materials with εr≥ 10, this model will be widely applicable.
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