{"title":"2.75 GHz low noise 0.35 µm CMOS transimpedance amplifier","authors":"E. Hammoudi, A. Mokhtar","doi":"10.1109/MED.2010.5547749","DOIUrl":null,"url":null,"abstract":"A low-noise and high-bandwidth Transimpedance Amplifier (TIA) at 2.75 GHz has been implemented in 0.35 µm CMOS technology. The designed amplifier is configured on three identical stages that use an active load. This structure operates at 3.3V power supply voltage, displays a transimpedance gain of 531 Ω, exhibits a gain bandwidth product (GBW) of 1.46 THz×Ω and a low-noise level of about 12.8 pA/√Hz , while operating with a photodiode capacitance of 0.4 pF. The predicted performance is verified using simulations tools with 0.35 µm CMOS AMS parameters.","PeriodicalId":149864,"journal":{"name":"18th Mediterranean Conference on Control and Automation, MED'10","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th Mediterranean Conference on Control and Automation, MED'10","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MED.2010.5547749","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
A low-noise and high-bandwidth Transimpedance Amplifier (TIA) at 2.75 GHz has been implemented in 0.35 µm CMOS technology. The designed amplifier is configured on three identical stages that use an active load. This structure operates at 3.3V power supply voltage, displays a transimpedance gain of 531 Ω, exhibits a gain bandwidth product (GBW) of 1.46 THz×Ω and a low-noise level of about 12.8 pA/√Hz , while operating with a photodiode capacitance of 0.4 pF. The predicted performance is verified using simulations tools with 0.35 µm CMOS AMS parameters.
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