{"title":"A wideband fully integrated 0.25/spl mu/m BiCMOS 5GHz medium power amplifier","authors":"M. Vaiana, G. Gramegna, M. Paparo","doi":"10.1109/BIPOL.2004.1365808","DOIUrl":null,"url":null,"abstract":"A wideband 4.2GHz-5.6GHz balanced Medium Power Amplifier has been designed in a 0.2Spm SiGe:C bipolar process. The two stage amplifier is housed in a VFQF’F”20 package with integrated inputloutput matcbing networks and onboard printed rat-race balnns. A saturated output power of 16dBm has been measured with a small signal gain of IS.2dB at SGHz with a total current consumption of llOmA from a 2.4V supply voltage at ambient temperature. The measured 3dB bandwidth is IIGHz, the best value ever reported in literature for a fully integrated medium PA housed in a standard padage for mass production witb DO external components required for inputloutput matching. The die size is 1.4~1.750 m d .","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365808","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A wideband 4.2GHz-5.6GHz balanced Medium Power Amplifier has been designed in a 0.2Spm SiGe:C bipolar process. The two stage amplifier is housed in a VFQF’F”20 package with integrated inputloutput matcbing networks and onboard printed rat-race balnns. A saturated output power of 16dBm has been measured with a small signal gain of IS.2dB at SGHz with a total current consumption of llOmA from a 2.4V supply voltage at ambient temperature. The measured 3dB bandwidth is IIGHz, the best value ever reported in literature for a fully integrated medium PA housed in a standard padage for mass production witb DO external components required for inputloutput matching. The die size is 1.4~1.750 m d .
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