A New CMOS OP-AMP Design with an Improved Adaptive Biasing Circuitry

Hatim Ameziane, Kamal Zared, H. Qjidaa
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引用次数: 2

Abstract

This paper sets out a new technique for designing an operational amplifier (OP-AMP) using tanner EDA 1um FDSOI CMOS Technology. Fully Depleted Silicon on Insulator used for building integrated circuits to support the temperature changes, the proposed OP-AMP operates at 3.75V power supply and 70uA bias current using the proposed Adaptive Biasing Circuitry (ABC), which its devices operate at the weak inversion to allow low power dissipation of 0.62mW. The 0.064us settling time and 37.016V/μs slew rate parameters improved by the ABC technique, reducing the power dissipation by operating the ABC devices in weak inversion. The phase margin is more than 100 degrees for the DC gain of 13.97dB, which is a reasonable margin when temperature range increases.
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一种改进自适应偏置电路的新型CMOS运放设计
本文提出了一种利用tanner EDA 1um FDSOI CMOS技术设计运算放大器(OP-AMP)的新技术。完全耗尽绝缘体上硅用于构建集成电路以支持温度变化,所提出的OP-AMP使用所提出的自适应偏置电路(ABC)在3.75V电源和70uA偏置电流下工作,其器件在弱反转下工作,允许低功耗为0.62mW。ABC技术改善了0.064us的稳定时间和37.016V/μs的摆率参数,通过在弱反转中工作ABC器件降低了功耗。当直流增益为13.97dB时,相位裕度大于100度,这是温度范围增大时的合理裕度。
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