Design and optimization of TiSix/HfO2 channel vertical double gate NMOS device

2016 IEEE International Conference on Semiconductor Electronics (ICSE) Pub Date : 2016-08-01 DOI:10.1109/SMELEC.2016.7573593

K. Kaharudin, F. Salehuddin, A. Zain, M. Aziz, Z. Manap, Nurul Akmal Abd Salam, Wira Hidayat Bin Mohd Saad

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引用次数: 2

Abstract

This paper aims to propose a new structure of vertical double-gate NMOS device with titanium silicide (TiSi_x) and hafnium dioxide (HfO₂) are utilized as gates and an insulator correspondingly. The simulation and characterization of the proposed device were carried out by using ATHENA and ATLAS modules of Silvaco TCAD tools. The threshold voltage (V_TH) of the device was then optimized by tuning the correct level of halo implant dose, halo implant tilt, S/D implant energy and S/D implant tilt via the L₉ orthogonal array (OA) of Taguchi method. The vertical TiSi_x/HfO₂ channel vertical double-gate NMOS device has shown excellent device characteristics as the V_TH, drive current (I_ON), leakage current (I_OFF), I_ON/I_OFF ratio and subthreshold swing (SS) were observed to be 0.2101 V, 2235.3 μA/μm, 1.363E-15 A/μm, 1.64E12 and 58.76 mV/dec respectively. These results are within the expected requirement of high performance (HP) multi gate (MG) technology as predicted by International Technology Roadmap Semiconductor (ITRS) 2013.

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TiSix/HfO2通道垂直双栅NMOS器件的设计与优化

本文旨在提出一种以硅化钛(TiSix)和二氧化铪(HfO2)分别作为栅极和绝缘体的新型垂直双栅NMOS器件结构。利用Silvaco TCAD工具中的ATHENA和ATLAS模块对所提出的器件进行了仿真和表征。通过田口法的L9正交阵列(OA)调整晕形种植体剂量、晕形种植体倾斜、S/D种植体能量和S/D种植体倾斜的正确水平，优化装置的阈值电压(VTH)。垂直TiSix/HfO2通道垂直双栅NMOS器件的VTH、驱动电流(ION)、泄漏电流(IOFF)、离子/IOFF比和亚阈值摆幅(SS)分别为0.2101 V、2235.3 μA/μm、1.363E-15 A/μm、1.64E12和58.76 mV/dec，具有良好的器件特性。这些结果符合国际技术路线图半导体(ITRS) 2013预测的高性能(HP)多门(MG)技术的预期要求。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2016 IEEE International Conference on Semiconductor Electronics (ICSE)

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