S. Srinivasan, C. Perret, E. Vissers, Pieter Geiregat, D. Thourhout, R. Loo, M. Pantouvaki, J. Campenhout
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引用次数: 2
Abstract
Quantum-confined Stark effect with a record absorption contrast of 2.5 for 1V swing is demonstrated in Ge/GeSi quantum well stacks grown on Si using ultra-thin buffer layers, targeting future integration in a silicon photonics platform.
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