Error behaviors testing with temperature and magnetism dependency for MRAM

Abstract

Magnetoresistive random access memory (MRAM) has the potential to become a universal memory for future storage system. However, the stability of MRAM is sensitive to temperature and magnetic field. To obtain a strong understanding about how the temperature and magnetic field impact the reliability characteristics of real MRAM devices, Everspin MR4A08BYS35, we present an error behavior model to categorize two types of MRAM errors. Based on our proposed error model, we conduct extensive experiments on real MRAM devices in different temperatures and magnetic fields. Our results show that MRAM lifetime for the chips we tested is demonstrated infinite under normal operation environment. The critical temperature is 75°C and the dominant error type is read error. In contrast, write error is more seriously than read error in magnetic environment. The critical magnetic field intensity is 140Gauss. These results can be used for measuring the fabrication quality of individual MRAM memory chips.