High Gain On-Chip Hemispherical Dielectric Resonator Antenna for 60 GHz Applications

Meshari D. Alanazi, S. Khamas
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引用次数: 2

Abstract

This paper explores how varying the structure of an on-chip 60 GHz dielectric resonator antenna (DRA) affects radiation characteristics such as gain, bandwidth and efficiency. Three configurations have been considered a standalone antenna, antenna with a single dielectric superstrate, and antenna with a dielectric superstrate as well as a parasitic substrate. A considerably high broadside gain of 12.4 dBi been achieved when the superstrate and parasitic substrate (SPS) are utilized. This has been achieved in conjunction with a 7.2% impedance bandwidth and a radiation efficiency of 81.6 %. All optimizations have been done using CST and cross-validated using HFSS.
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用于60 GHz应用的高增益片上半球形介电谐振器天线
本文探讨了60ghz片上介质谐振器天线(DRA)结构变化对增益、带宽和效率等辐射特性的影响。三种结构被认为是独立天线,天线与一个单一的介电层,天线与一个介电层以及寄生衬底。利用上层和寄生基板(SPS)时,实现了12.4 dBi的相当高的宽侧增益。这与7.2%的阻抗带宽和81.6%的辐射效率相结合。所有优化都使用CST完成,并使用HFSS进行交叉验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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