The potential of EUV lithography

Abstract

Lithographers are currently unable to generate quality patterning at tight pitches with values of k1 that are as low as have been achieved routinely using ArF immersion patterning, a situation that is largely due to the continuing pursuit of resists with low exposure doses. As a consequence, multiple patterning may be required to scale to a second node with EUV lithography, which reduces its cost-effectiveness, even if each individual exposure is done with a low exposure dose. Because of process control limitations, such multiple patterning may necessarily be triple or quadruple patterning, rather than double patterning. Processes with reduced line-edge roughness (LER) could be applied to front-end layers, increasing the value of EUV lithography. High-NA EUV lithography is in development, with a number of technical issues requiring solution, but with no apparent show-stoppers.