S. Forster, A. Hoffmann, J. Charles, S. Kerns, D. Kerns, M. de la Bardonnie, P. Mialhe
{"title":"Electrical and optical analysis of low fluence fast neutron damage to JFETs","authors":"S. Forster, A. Hoffmann, J. Charles, S. Kerns, D. Kerns, M. de la Bardonnie, P. Mialhe","doi":"10.1109/RADECS.1999.858633","DOIUrl":null,"url":null,"abstract":"The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analyzed at several fluences using a custom software. Electrical parameter changes are attributed to bulk semiconductor defects. Irradiation effects on passivation overlayers are evaluated using analysis of gate-channel junction electroluminescence.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analyzed at several fluences using a custom software. Electrical parameter changes are attributed to bulk semiconductor defects. Irradiation effects on passivation overlayers are evaluated using analysis of gate-channel junction electroluminescence.
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