Photonic crystal and photonic wire technology, materials and devices

Richard M. De La Rue, P. Pottier, H. Chong, I. Ntakis, A. Jugessur, D. McComb, N. Johnson, M. McLachlan, J. Marsh, C. Bryce, Shin Sung Kim, A. Craven, W. Smith
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引用次数: 1

Abstract

Light channeling and other structures that exploit strong optical confinement are an essential requirement for the realisation of high-density photonic integrated circuits. Strong confinement and controlled feedback are also important for efficient and compact sources for light with various levels of coherence and directionality. The presentation will survey work on various planar photonic crystal and wire device structures realised both in material systems providing strong vertical confinement (e.g. S-o-I) and in systems with weak vertical confinement such as typical epitaxial III-V semiconductor heterostructures. Work towards the combination of a number of elements into a single photonic IC will be highlighted, as will structures which combine photonic crystal and photonic wire features. Planar microcavities for frequency selection will be featured, in particular. We shall also resurvey briefly the technology aspects of fabrication, including electron-beam lithography (EBL), reactive ion etching (RIE), focused ion-beam etching (FIBS) and excimer laser lithography. Finally we shall consider techniques for the growth of self-organised photonic crystals with greater perfection and better controlled orientation.
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光通道和其他利用强光约束的结构是实现高密度光子集成电路的基本要求。强约束和受控反馈对于具有不同水平相干性和方向性的高效紧凑光源也很重要。该报告将调查各种平面光子晶体和线器件结构的工作,这些结构既可以在具有强垂直约束的材料系统中实现(例如S-o-I),也可以在具有弱垂直约束的系统中实现,例如典型的外延III-V半导体异质结构。将许多元件组合成单个光子集成电路的工作将得到强调,结合光子晶体和光子线特征的结构也将得到强调。特别是用于频率选择的平面微腔。我们还将简要回顾制造技术方面,包括电子束刻蚀(EBL),反应离子刻蚀(RIE),聚焦离子束刻蚀(FIBS)和准分子激光刻蚀。最后,我们将考虑更完善和更好地控制取向的自组织光子晶体的生长技术。
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