1.5 /spl mu/m analog BiCMOS/DMOS process for medium voltage and current power ICs applications up to 50 V

M. El-Diwany, J. McGregor, E. Demirliogiu, R. Huang
{"title":"1.5 /spl mu/m analog BiCMOS/DMOS process for medium voltage and current power ICs applications up to 50 V","authors":"M. El-Diwany, J. McGregor, E. Demirliogiu, R. Huang","doi":"10.1109/BIPOL.1995.493884","DOIUrl":null,"url":null,"abstract":"ABCD150 is a 1.5 /spl mu/m analog BiCMOS/DMOS process. It addresses power ICs for medium voltage and current applications up to 50 V. Four types of power MOS transistors are available; low voltage MOS; high voltage MOS; vertical DMOS; and HV lateral DMOS. Each is optimized for minimum specific on resistance R/sub ds/(on) (in /spl Omega/.mm/sup 2/) at their respective operating voltages.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"540 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

ABCD150 is a 1.5 /spl mu/m analog BiCMOS/DMOS process. It addresses power ICs for medium voltage and current applications up to 50 V. Four types of power MOS transistors are available; low voltage MOS; high voltage MOS; vertical DMOS; and HV lateral DMOS. Each is optimized for minimum specific on resistance R/sub ds/(on) (in /spl Omega/.mm/sup 2/) at their respective operating voltages.
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1.5 /spl mu/m模拟BiCMOS/DMOS工艺,适用于高达50 V的中压和电流功率ic应用
ABCD150是1.5 /spl mu/m模拟BiCMOS/DMOS工艺。它解决了中压和高达50 V的电流应用的功率ic。功率MOS晶体管有四种类型;低压MOS;高压MOS;垂直DMOS结构;HV横向DMOS。每个都针对最小特定电阻R/sub /(on) (in /spl Omega/)进行了优化。Mm /sup 2/)在各自的工作电压下。
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