Paradigm Changes in Power Electronics Caused by Emerging Materials

Abstract

The introduction of the wide bandgap (WBG) semiconductor materials such silicon carbide (SiC) and gallium nitride (GaN) enables the increase of voltage, current and temperature during the operation of semiconductor devices. That means that high voltage applications including ship propulsion, high-voltage DC transmission (HVDC) and renewable energy systems could be realized using transistors instead of the more traditional application of thyristors. However, transistor applications are not limited to IGBT transistors. New materials could improve the planar power MOSFET technology enabling the power converter efficiency improvement. Furthermore, this improvement could change the traditional AC power system used traditionally from the beginning of the 20th century by introducing the DC current into households and power transmission.