Fabrication and Characterization of CdS Quantum Dot-Sensitized Solar Cell Based on TiO2 Film by Successive Ionic Layer Adsorption and Reaction (SILAR) Technique

Abstract

The most affordable alternatives to traditional silicon solar cells are quantum dot-sensitized solar cells. II-VI semiconductors compound have been widely used as Quantum Dot absorbers. Thin film of TiO2 blocking layer was deposited onto FTO layer to prevent recombination of charges to achieve higher efficiency. A TiO2 nanostructure-based cadmium sulfide quantum dot sensitive solar cell has been created. TiO2 films degrade utilizing the SILAR method (Successive Ionic Layer Adsorption and Reaction). Enhancement the electrical conduction and reducing the recombination of charges between layer is a very strong tool for the characterization of photovoltaic devices. TiO2 films were immersed into 0. 05M KC1 solution at 70 0C for different time. Efficiency was experimentally tested using current-voltage (I-V) in order to extract fabricated device properties. Solar cells with cadmium sulfide quantum dots are demonstrating a performance of 1.5-1.82%. Under AM1.5 illumination, a short circuit current density of 5.922 mA/c$\mathrm{m}^{2}$ and an open circuit voltage of around 0.613 V were attained.