DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS

Kh. S. Daliev, M. Onarkulov, S. Otajonov
{"title":"DEVICE FOR STUDYING TENZE SENSITIVITY IN PHOTOSENSITIVE SEMICONDUCTOR FILMS","authors":"Kh. S. Daliev, M. Onarkulov, S. Otajonov","doi":"10.37681/2181-1652-019-x-2021-1-5","DOIUrl":null,"url":null,"abstract":"A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it","PeriodicalId":153395,"journal":{"name":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.37681/2181-1652-019-x-2021-1-5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films when illuminated with natural and monochromatic light within the deformation range from -210-3 to 210-3 rel. At the same time, this device makes it possible to deform the same film repeatedly without destroying it
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
研究光敏半导体薄膜张力灵敏度的装置
研制了一种用于研究光敏宽间隙半导体薄膜应变灵敏度的装置。该装置可以研究光敏宽间隙半导体薄膜在自然光和单色光照射下在-210-3 ~ 210-3 rel变形范围内的应变灵敏度。同时,该装置使同一薄膜在不破坏的情况下反复变形成为可能
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
INVESTIGATION OF SILICON DIFFUSIONLY ALLOYED WITH ZINC AND SELENIUM ATOMS THIN-FILM SEMICONDUCTOR OPTOELECTRONIC STRESS METER THEORETICAL INVESTIGATION OF OPTICAL PROPERTIES OF SEMICONDUCTOR SPHERICAL QUANTUM DOTS INVESTIGATION OF THE HOLOGRAPHIC CHARACTERISTICS OF PHOTOCHROMIC MATERIALS Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1