High current/high current density carbon nanotube cold cathodes

E. Minoux, P. Vincent, L. Hudanski, J. Schnell, P. Legagneux, K. Teo, L. Gangloff, R. Lacerda, M. Chhowalla, D. Hasko, H. Ahmed, G. Amaratunga, W. Milne
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引用次数: 1

Abstract

Field emission measurements on individual carbon nanotubes grown by dc plasma CVD at 700/spl deg/C have been performed with a high resolution scanning anode field emission microscope. I-V characteristics of as-grown CNs show a saturation for currents above 1 /spl mu/A and the maximum emission current is in the range 5-10 /spl mu/A. This saturation is attributed to a bad CN/substrate contact. By improving this electric contact by thermal annealing at 950/spl deg/C, the saturation is suppressed. To improve emission current density, the effect of CN density on maximum emission current is studied. For this purpose, 0.5 /spl times/ 0.5 mm/sup 2/ arrays of vertically aligned CNs with a 1.5 /spl mu/m height, a 15 nm diameter and a 3 /spl mu/m spacing are grown. The CN density is 10/sup 7/ cm/sup -2/. CNs exhibit almost the same aspect ratio [200] but the CN density is increased by a factor of 10. From such an array, an emission current of 10 mA corresponding to a current density of 4 A cm/sup -2/ is measured.
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大电流/大电流密度碳纳米管冷阴极
采用高分辨率扫描阳极场发射显微镜,对700/spl度/C直流等离子体CVD生长的单个碳纳米管进行了场发射测量。生长CNs的I-V特性表明,当电流大于1 /spl mu/ a时,CNs达到饱和,最大发射电流在5-10 /spl mu/ a范围内。这种饱和归因于不良的CN/substrate接触。通过在950/spl℃下的热退火来改善这种电接触,抑制了饱和。为了提高发射电流密度,研究了CN密度对最大发射电流的影响。为此,种植了0.5 /spl倍/ 0.5 mm/sup / /阵列的垂直排列cnns,高度为1.5 /spl亩/米,直径为15纳米,间距为3 /spl亩/米。CN密度是10/sup 7/ cm/sup -2/。神经网络显示出几乎相同的纵横比[200],但神经网络密度增加了10倍。从这样的阵列,发射电流为10ma,对应于电流密度为4a cm/sup -2/。
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