Low noise differential amplifier design using novel inGaAs/inALAs pHEMT for wireless applications

N. Ahmad, M. Muhamad, C. Wooi, M. Isa
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引用次数: 1

Abstract

This paper discusses on the differential LNA design on Pseudomorphic High-electron-mobility transistor (pHEMT) based technology for wireless application, and the standard 1μm pHEMT is implemented throughout the design. The LNA design has been completed with two stages, with the purpose of successfully enhance the gain and noise performance. The proposed LNA design has the functionality of application for 26 ± 4 dB gains with noise figure that is less than 1.5 dB. The input return losses (S11) of −13.59 dB and power consumption of 124 mW are provided in this paper. The interested frequency range from 0.4 until 2 GHz is allocated in L band, hence making the design unconditionally stable within the desired frequency range.
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采用新颖的inGaAs/inALAs pHEMT设计的低噪声差分放大器,用于无线应用
本文讨论了基于伪晶高电子迁移率晶体管(pseudo - omorphic High-electron-mobility transistor, pHEMT)技术的差分LNA设计,并在整个设计中实现了标准的1μm pHEMT。LNA设计分两个阶段完成,目的是成功地提高增益和噪声性能。所提出的LNA设计具有26±4 dB增益的应用功能,噪声系数小于1.5 dB。本文给出的输入回波损耗(S11)为- 13.59 dB,功耗为124 mW。从0.4 GHz到2ghz的感兴趣频率范围被分配在L波段,从而使设计无条件地稳定在期望的频率范围内。
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