{"title":"Laser sintering of polycrystalline Ge-Sn films","authors":"Md. Toriqul Islam, M. Gupta","doi":"10.1109/GFP51802.2021.9673991","DOIUrl":null,"url":null,"abstract":"A laser sintering fabrication process to deposit 3 µm thick GeSn films on silicon substrates has been demonstrated. A 2% tin was incorporated in germanium to increase p-type mobility. High hole mobility of 166.2 cm2/v.s was achieved for laser-sintered polycrystalline GeSn films.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GFP51802.2021.9673991","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A laser sintering fabrication process to deposit 3 µm thick GeSn films on silicon substrates has been demonstrated. A 2% tin was incorporated in germanium to increase p-type mobility. High hole mobility of 166.2 cm2/v.s was achieved for laser-sintered polycrystalline GeSn films.
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