J. Weber, K. Bertness, J. Schlager, N. Sanford, A. Imtiaz, T. M. Wallis, P. Kabos, K. Coakley, V. Bright, L. Mansfield
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引用次数: 0
Abstract
The photoresponse of three different photovoltaic Cu(In, Ga)Se2 (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values for bulk samples, as well as a preliminary understanding of more complicated multilayer photovoltaics. The spectral dependence of CIGS samples is probed at 405, 635, 808 and 980 nm wavelengths. In addition, we present two-dimensional raster scans that may reveal grain-boundary effects under illumination.
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