Heesauk Jhon, Hakchul Jung, M. Koo, Hyungcheol Shin
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引用次数: 9
Abstract
A dual-band CMOS low-noise amplifier (LNA) for ISM-band application is reported. For low power and dual band operation, the designed LNA adopts a positive-feedback LC-ladder network. Moreover, for cost effective approach, the LNA has been fabricated using a 0.18-mum mixed-signal CMOS process. The implemented LNA shows gain of 8.3 dB and 11.2 dB, and noise figure (NF) of 6.1 dB and 6.6 dB at 19 GHz and 25 GHz, respectively. The proposed LNA exhibits 8.1 mW power consumption from 0.8 V supply and the active chip area including pad is about 720 times 460 mum2.
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