EKV3 Parameter Extraction and Characterization of 90nm RF-CMOS Technology

Abstract

EKV3 is a circuit-design-oriented compact MOSFET model for analog/RF IC design. The paper presents parameter extraction guidelines and modelling using EKV3 for TOSHIBA's 90 nm RF-CMOS technology covering DC, CV and RF (S-parameter) and temperature scalability. RF verification was done by the use of multi-finger MOSFETs with many variations of gate length, width of unit fingers and number of fingers. A scalable RF model was successfully created. Extraction of RF parasitics and their scaling with RF layout is investigated. The EKV3 model successfully predicted high-frequency behaviour of 90 nm CMOS up to 20 GHz over a wide range of bias conditions.