Double Plasmonic Layered Electro-Absorption Modulator on Silicon Waveguide

Abstract

The electro-absorption modulator is the future of photonic integrated circuits technology. In this paper, a double-layered indium tin oxide based electro-absorption modulator is proposed and analyzed through the finite element method. Double plasmonic layers play an effective role to obtain a compact modulator having 3 dB length of 0.2118 μm with higher figure of merit around 797.60 and high extinction ratio of 14.15 dB/μm at 1550 nm. The device can also show a lower insertion loss of around 0.01774 dB/μm at the same wavelength. Therefore, the proposed plasmonic based modulator could be a better candidate for the optical communication.