Performance estimation of junctionless FinFET with graded channel design

S. Kaundal, Shelja Kaushal, A. Rana
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引用次数: 4

Abstract

This paper investigates the Junctionless (JL) FinFET with laterally graded channel and differentially graded channel design using TCAD simulation. It is demonstrated that differentially graded-JL FinFET (DG-JL FinFET) provides better subthreshold characteristics as compared to laterally graded-JL FinFET (LG-JL FinFET) and conventional uniformly doped-JL FinFET (UD-JL FinFET). However, the drive current is higher in LD-JL FinFET.
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梯度通道设计无结FinFET的性能评估
本文利用TCAD仿真研究了具有横向梯度通道和差分梯度通道的无结FinFET设计。结果表明,与横向梯度jl FinFET (LG-JL FinFET)和常规均匀掺杂jl FinFET (UD-JL FinFET)相比,差分梯度jl FinFET (DG-JL FinFET)具有更好的亚阈值特性。然而,在LD-JL FinFET中驱动电流更高。
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