W. Vereecken, Urbain Van Bogget, T. Colin, R. Vinella, J. Das, P. Merken, J. Vermeiren
{"title":"A low-noise, extended dynamic range 1.3 megapixel InGaAs array","authors":"W. Vereecken, Urbain Van Bogget, T. Colin, R. Vinella, J. Das, P. Merken, J. Vermeiren","doi":"10.1117/12.2019030","DOIUrl":null,"url":null,"abstract":"Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.","PeriodicalId":338283,"journal":{"name":"Defense, Security, and Sensing","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Defense, Security, and Sensing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2019030","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Xenics has designed and manufactured a 1280*1024 pixel, 17 µm pitch InGaAs array for SWIR imaging in the [0.9 - 1.7 µm] range. It will report on the first characterization results of the device. As usual for this type of room temperature operated SWIR image sensors, the detector interface is based on a CTIA stage, yielding excellent linearity, a low detector bias and hence a low and stable dark current combined with low image lag. The charge to voltage conversion factor is 40 µV/e-. The pixel interface scheme contains a CDS circuit in order to reduce the kTC noise and common mode effects. The noise is expected to be below 30 e-rms in linear mode, resulting in a dynamic range < 60 dB. Additionally the linear dynamic range is complemented with a high dynamic range logarithmic response with a saturation level < 5 nA/pixel. The information in the pixel matrix can be read via 2, 4 or 8 outputs, yielding a maximum full frame rate between 50 and 200 Hz. Each output is operating at 40 MHz pixel rate. The outputs are differential with a common mode voltage of 0.9 V and an adjustable output swing of 2 Vptp. Nevertheless the power dissipation shall be below 330 mW.