{"title":"A K-band Driven Power Amplifier for Automotive Radar Applications in 0.15-µm GaAs pHEMT Process","authors":"Xianhu Luo, Xu Cheng, Jiangan Han, Xinlin Xia, Yingjiang Guo","doi":"10.1109/PIERS-Fall48861.2019.9021342","DOIUrl":null,"url":null,"abstract":"In this paper, a K-band driving power amplifier (DPA) with high gain and high output 1 dB compression point (P−1 dB, out) is presented, which is designed and manufactured in the 0.15-µm GaAs pHEMT process. In order to achieve high gain with simple direct current (DC) bias, the four-stage common source amplifier based on self-biased techniques are employed. The DC feed network adopts a dual inductors topology, which makes the DPA achieve a high power capacity threshold. Furthermore, in order to obtain higher linearity and P−1 dB, out, the maximum power output matching are adopted in the DPA. The DPA exhibit a measured gain more than 20 dB, and a P−1 dB, out over 16 dBm from 20 to 26 GHz and the S11 and S22 are less than −8.5 dB within the entire band of frequencies, it is just with only one DC feed pad and serviceable for the automotive radar applications.","PeriodicalId":197451,"journal":{"name":"2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PIERS-Fall48861.2019.9021342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a K-band driving power amplifier (DPA) with high gain and high output 1 dB compression point (P−1 dB, out) is presented, which is designed and manufactured in the 0.15-µm GaAs pHEMT process. In order to achieve high gain with simple direct current (DC) bias, the four-stage common source amplifier based on self-biased techniques are employed. The DC feed network adopts a dual inductors topology, which makes the DPA achieve a high power capacity threshold. Furthermore, in order to obtain higher linearity and P−1 dB, out, the maximum power output matching are adopted in the DPA. The DPA exhibit a measured gain more than 20 dB, and a P−1 dB, out over 16 dBm from 20 to 26 GHz and the S11 and S22 are less than −8.5 dB within the entire band of frequencies, it is just with only one DC feed pad and serviceable for the automotive radar applications.