Scattering by implants during MRI: A simplified computational approach

S. A. Mohsin, N. M. Sheikh
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Abstract

During magnetic resonance imaging (MRI), an implanted lead present in a patient's body scatters the radiofrquency (RF) field used for magnetic resonance. The resultant RF field can achieve very high values in the vicinity of the implant structure. The conduction currents flowing in tissue can cause dangerous resistive heating. Therefore scattering by implanted devices is an important safety issue in MR scanning. The scattering problem is large and computationally expensive. However the scattered field produced by the implant has a significant strength only in the vicinity of the implant and does not extend over a large tissue volume. Using this fact, a hybrid finite element-method of moments (FEM-MoM) formulation is used in this paper to compute the scattered fields of different implants.
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MRI中植入物散射:一种简化的计算方法
在磁共振成像(MRI)过程中,植入患者体内的铅会散射用于磁共振的射频(RF)场。由此产生的射频场在植入物结构附近可以达到非常高的值。在组织中流动的传导电流会引起危险的电阻加热。因此,植入装置的散射是核磁共振扫描中一个重要的安全问题。散射问题规模大,计算成本高。然而,由植入物产生的散射场仅在植入物附近具有显著的强度,并且不会延伸到大的组织体积上。基于这一事实,本文采用混合有限元-矩量法(FEM-MoM)公式来计算不同植入物的散射场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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