Zhong Ma, Hongqi Yu, Shiqing Zhang, Yi Sun, Jietao Diao, Day-Uei Li
{"title":"Random time delay analysis of Nb2O5 and OTS memristors","authors":"Zhong Ma, Hongqi Yu, Shiqing Zhang, Yi Sun, Jietao Diao, Day-Uei Li","doi":"10.1109/ICISCAE52414.2021.9590725","DOIUrl":null,"url":null,"abstract":"Memristors show excellent ductility and low power consumption. They have broad applications in logic circuits, neuromorphic computing and non-volatile memory. Memristors show great potential in true random number generation (TRNG). To verify memristors' randomness, we made two kinds of memristors, measured the randomness of their delays, and investigated their different randomness mechanisms. We did thousands of experiments and verified the feasibility of making a new TRNG using these two kinds of memristors. We also found a new application of memristors to make non-linear device.","PeriodicalId":121049,"journal":{"name":"2021 IEEE 4th International Conference on Information Systems and Computer Aided Education (ICISCAE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 4th International Conference on Information Systems and Computer Aided Education (ICISCAE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICISCAE52414.2021.9590725","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Memristors show excellent ductility and low power consumption. They have broad applications in logic circuits, neuromorphic computing and non-volatile memory. Memristors show great potential in true random number generation (TRNG). To verify memristors' randomness, we made two kinds of memristors, measured the randomness of their delays, and investigated their different randomness mechanisms. We did thousands of experiments and verified the feasibility of making a new TRNG using these two kinds of memristors. We also found a new application of memristors to make non-linear device.